IS61LV25616AL-10TLI是ISSI公司的SRAM芯片,它的存储容量为16*256K,并具有高低选择信号.

,IS61LV25616AL-10TLI简介

The ISSI IS61LV25616AL is a high-speed, 4,194,304-bit static RAM organized as 262,144 words by 16 bits. It is fabricated using ISSI's high-performance CMOS technol-ogy. This highly reliable process coupled with innovative 
circuit design techniques, yields high-performance and low power consumption devices.When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE and OE. The active LOW Write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower 
Byte (LB) access.The IS61LV25616AL is packaged in the JEDEC standard 44-pin 400-mil SOJ, 44-pin TSOP Type II, 44-pin LQFP and 48-pin Mini BGA (8mm x 10mm).

,IS61LV25616AL-10TLI参数

• High-speed access time: 

— 10, 12 ns 
• CMOS low power operation
• Low stand-by power: 
— Less than 5 mA (typ.) CMOS stand-by
• TTL compatible interface levels
• Single 3.3V power supply
• Fully static operation: no clock or refresh 
required
• Three state outputs
• Data control for upper and lower bytes
• Industrial temperature available
• Lead-free available

IS61LV25616AL-10TLI高清图，细节图，原装现货供应.

IS61LV25616AL-10TLI标准包装1350PCS实物供应2020年

IS61LV25616AL-10TLI标准托盘1350PCS实物供应2020年

IS61LV25616AL-10TLI大量现货实物供应

IS61LV25616AL-10TLI是ISSI公司的SRAM芯片,它的存储容量为16*256K,并具有高低选择信号. 

特点如下: