News Centerposition:Baoxingwei > News Center > 正文
ISSI Hot Sell -IS62WV5128BLL-55HLI Ultra-low Power SRAM High Speed 4M Low voltage 512K x 8
Edit:Baoxingwei Technology | Time:2023-03-23 15:17 | Number of views:225
Shenzhen Baoxingwei Technology Co., Ltd. is a professional agent for ISSI full series of high-speed low power SRAM and low and medium density DRAM memory. There are spot products in Shenzhen, fast delivery time, original shipment, can provide technical support
The ISSI IS62WV5128BLL are high speed, 4M bit static RAMs organized as 512K words by 8 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields highperformance and low power consumption devices. When CS1 is HIGH (deselected) the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs. The active LOW Write Enable (WE) controls both writing and reading of the memory. TheIS62WV5128ALLandIS62WV5128BLLarepackaged in the JEDEC standard 32-pin TSOP (TYPE I), 32-pin sTSOP (TYPE I), 32-pin TSOP (Type II), 32-pin SOP and 36-pin mini BGA.
IS62WV5128BLL-55HLI Hd, detail, original stock.
FEATURES
• High-speed access time: 55ns, 70ns • CMOS low power operation 36 mW (typical) operating 9 µW (typical) CMOS standby • TTL compatible interface levels • Single power supply 1.65V – 2.2V Vdd (IS62WV5128ALL) 2.5V – 3.6V Vdd (IS62WV5128BLL) • Fully static operation: no clock or refresh required • Three state outputs • Industrial temperature available • Lead-free available
IS62WV5128BLL-55HLI standard package 2340PCS physical spot supply, without delay in production delivery