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ISSI memory High-Speed (Low Power)
Source: Baoxingwei technology | Release time:2020-01-13 14:51 | Number of views:464 |
Name:ISSI memory High-Speed (Low Power)
Detailed introduction:
ISSI 是Integrated Silicon Solution, Inc.缩写ISSI成立于1988年,ISSI的主要产品是高速、低功耗 SRAM 和中低密度 DRAM,ISSI公司还设计和销售 EEPROM和伪SRAM,ISSI面向高增长市场提供低成本、高质量的半导体产品,并寻求与客户建立长期合作关系,ISSI公司已独立开发和设计出静态存储器(SRAM)、电可擦写随机存储器(EEPROM)、智能卡芯片)、射频芯片、基于CAM的并行搜索处理芯片以及智能人机接口芯片(HID)等多种产品。这些产品被广泛应用于通信、网络设备、移动电话及消费类电子产品领域,产品投产后供不应求,市场前景广阔。
Den | Org | Part Number | Vcc | Speed(ns) | Pkg(Pins) |
64K | 8Kx8 | IS61C64AL | 5V | 10 | SOJ(28),TSOP1(28) |
256K | 32Kx8 | IS61C256AL | 5V | 10,12 | SOJ(28),TSOP1(28) |
512K | 32Kx16 | IS61C3216AL | 5V | 12 | SOJ(44),TSOP2(44) |
1M | 64Kx16 | IS61C6416AL | 5V | 12 | SOJ(44),TSOP2(44) |
1M | 128Kx8 | IS61C1024AL | 5V | 12 | SOJ(32.3),SOJ(32.4),TSOP1(32),sTSOP(32) |
4M | 512Kx8 | IS61C5128AL | 5V | 10,12 | SOJ(36),TSOP2(44) |
4M | 512Kx8 | IS61C5128AS | 5V | 25 | SOP(36),sTSOP1(32),TSOP2(32) |
4M | 256Kx16 | IS61C25616AL | 5V | 10 | SOJ(44),TSOP2(44) |
4M | 256Kx16 | IS61C25616AS | 5V | 25 | SOJ(44),TSOP2(44) |