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SST25VF010A-33-4C-SAE Shenzhen warehouse shipment on the same day, rapid quotation within two hours of rapid shipment, the original MICROCHIP brand
Edit:Baoxingwei Technology | Time:2023-03-17 10:10 | Number of views:11
SST25VF010A-33-4C-SAE简介 Description
SST的串行闪存系列具有四线、SPI兼容接口,允许低引脚数封装占用较少的PCB主板空间,可降低系统总成本。SST25VF010A-33-4C-SAE SPI串行闪存采用SST专有的高性能CMOS超级闪存技术制造。与其他产品相比,分裂栅单元设计和厚氧化层隧道注入器具有更好的可靠性和可制造性,SST25VF010A-33-4C-SAE 设备在降低功耗的同时显著提高了性能,总能量消耗是外加电压、电流和施加时间的函数。因为对于任何给定的电压范围,SuperFlash技术使用较少的电流进行编程,并且具有更短的擦除时间,在任何擦除或程序操作过程中消耗的总能量比其他闪存技术都要少。SST25VF010A设备使用单一的2.7-3.6V电源运行。SST's serial flash family features a four-wire, SPI-compatible interface that allows low-pin packages to take up less PCB motherboard space, reducing total system cost. The SST25VF010A-33-4C-SAE SPI serial flash is manufactured using SST's proprietary high-performance CMOS super flash technology. The split grid unit design and thick oxide layer tunnel injector provide better reliability and manufacturability than other products. The SST25VF010A-33-4C-SAE device significantly improves performance while reducing power consumption, with total energy consumption being a function of applied voltage, current and application time. Because SuperFlash technology uses less current to program for any given voltage range and has shorter erase times, the total energy consumed during any erase or program operation is less than other flash technologies. The SST25VF010A device operates with a single 2.7-3.6V power supply.
SST25VF010A-33-4C-SAE现货实物图 In stock-picture of real products
SST25VF010A-33-4C-SAE型号命名规则说明
SST标识SST(MICROCHIP)品牌LOGO
25标识25串行存储器系列产品
VF代表工作电压2.7-3.6V
010A代表储存容量1 Mbit
33代表时钟频率33NS
4代表芯片可以擦写10000次数
C代表产品耐温度级别=0°C to +70°C,I=-40°C to +85°C
SAE代表第一个S代表SOIC8,A代表8Pin,最后E代表环保无铅
包装规格
SST25VF010A-33-4C-SAE的包装规格为:
包装类型:管装
每管100pcs;
每包装100pcs*100;共10000pcs;
每整包装4内盒,共40000pcs。
SST LOGO SST(MICROCHIP) brand logo
25 Identifies 25 serial memory series products
VF indicates the working voltage of 2.7-3.6V
010A Indicates that the storage capacity is 1 Mbit
33 indicates the clock frequency 33NS
4 means the chip can be erased 10,000 times
C indicates the product temperature resistance level =0°C to +70°C, I=-40°C to +85°C
SAE stands for the first S for SOIC8, A for 8Pin, and finally E for Environmentally lead-free
Packing specification
The packaging specifications of SST25VF010A-33-4C-SAE are:
Package type: tube pack
100pcs per tube;
100pcs*100 per package; A total of 10000pcs;
Each package contains 4 boxes, a total of 40,00pcs.
SST25VF010A-33-4C-SAE特征
•单个2.7-3.6V读写操作
•串行接口架构–SPI兼容:模式0和模式3
•33 MHz最大时钟频率
•卓越的可靠性
–耐久性:100000次循环(典型)
–超过100年的数据保留期
•低功耗:
–有效读取电流:7 mA(典型)待机(典型电流:8µA)
•灵活的擦除功能
–统一的4kbyte扇区
–统一的32kbyte覆盖块
•快速擦除和字节程序:
–芯片擦除时间:70毫秒(典型)
–扇区或块擦除时间:18毫秒(典型)
–字节编程时间:14µs(典型)
•自动地址增量(AAI)编程
–减少字节程序操作的总芯片编程时间
•写入结束检测
–软件状态
•固定销(Hold#)
–将串行序列挂起到内存中
不取消选择设备
•写保护(WP#)
–启用/禁用状态的锁定功能
登记
•软件写保护
–通过处于状态的块保护位写入保护
登记
•温度范围
–商用:0°C至+70°C
–工业:-40°C至+85°C
–延长:-20°C至+85°C
•提供封装
–SOIC8 150mil
–WSON8(5毫米x 6毫米)
Single 2.7-3.6V read and write operation
• Serial interface architecture - SPI compatibility: Mode 0 and mode 3
•33 MHz Maximum clock frequency
• Excellent reliability
-- Durability: 100000 cycles (typical)
- More than 100 years of data retention
• Low power consumption:
- Effective reading current: 7 mA (typical) Standby (typical current: 8µA)
• Flexible erasing function
- Unified 4kbyte sector
- Unified 32kbyte coverage block
• Quick erase and byte programs:
-- Chip erase time: 70 ms (typical)
- Sector or block erase time: 18 ms (typical)
-- Byte programming time: 14µs (typical)
• Automatic address increment (AAI) programming
- Reduces the total chip programming time for byte program operations
• Write end detection
- Software status
• Fixed pin (Hold#)
- Mount the serial sequence into memory
Do not deselect devices
• Write protection (WP#)
- Enables or disables the status lock function
register
• Software write protection
- Write protection through in-state block protection bits
register
• Temperature range
- Commercial: 0°C to +70°C
- Industrial: -40°C to +85°C
- Extension: -20°C to +85°C
• Provide packaging
- SOIC8 150mil
-- WSON8 (5 mm x 6 mm)
•SST25VF010A-33-4C-SAE符合RoHS标准
SST25VF010A-33-4C-SAE框架图
SST25VF010A-33-4C-SAE封装图
SST25VF010A-33-4C-SAE识别ID(Product Identification)
SST25VF010A-33-4C-SAE命名规则
SST串行存储器选型表格
型号(Device) | 容量(Density) | 电压(Voltage) | 时钟速度(MHz) | 封装(Packages) |
512Kb(64Kx8) | 2.7-3.6V | 33 | SOIC-8,WSON-8 | |
SST25VF010A | 1Mb(128Kx8) | 2.7-3.6V | 33 | SOIC-8,WSON-8 |
2Mb(256Kx8) | 2.7-3.6V | 80 | SOIC-8,WSON-8 | |
4Mb(512Kx8) | 2.7-3.6V | 50 | SOIC-8,WSON-8 | |
8Mb(1Mx8) | 2.7-3.6V | 50 | SOIC-8,WSON-8 | |
16Mb(2Mx8) | 2.7-3.6V | 104 | SOIC-8,WSON-8 | |
32Mb(4Mx8) | 2.7-3.6V | 104 | SOIC-8,WSON-8 | |
64Mb(8Mx8) | 2.7-3.6V | 104 | SOIC-8,WSON-8 |