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代理SST39SF010A-70-4C-NHE(图片)高性能、 低功耗、 超高可靠性和小扇区等特性并行闪存存储器
Edit:Baoxingwei Technology | Time:2020-01-11 10:06 | Number of views:285
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Multi-Purpose {attr}1065{/attr}和Multi-Purpose Flash Plus构成了并行闪存存储器产品系列, 具有高性能、 低功耗、 超高可靠性和小扇区等特性。 与传统闪存相比, 基于Microchip的SuperFlash技术的MPF和MPF+具有更快速的编程、 擦除和读取操作, 从而降低功耗并提高生产效率。除了提供3V和5V存储器产品以外, MPF器件和MPF+器件还提供与业界标准闪存相比可显著节省功耗的1.8V器件。 该系列提供了业界最小尺寸的标准封装XFLGA和WFBGA(最小尺寸均为4 mm x 6 mm)。 对于空间受限的应用,它们是一种理想的选择。高级Multi-Purpose Flash Plus器件 (高级MPF+器件)
SST39SF010A-70-4C-NHE并行闪存的主要特性
SST39SF010A-70-4C-NHE硬件复位/引导块/擦除暂停
SST39SF010A-70-4C-NHE安全ID和对64 Mb的页读/写
SST39SF010A-70-4C-NHE工作电压:1.65–1.95V,2.7–3.6V,4.5–5.5V
SST39SF010A-70-4C-NHE 低功耗
SST39SF010A-70-4C-NHE工作电流:5 mA(典型值)待机电流:3 μA(典型值)
SST39SF010A-70-4C-NHE快速读访问时间55 ns和70 ns(39系列),25 ns(38系列)
SST39SF010A-70-4C-NHE快速编程* 7 μs/字(典型值,39系列)1.75 μs/字(典型值,38系列)
SST39SF010A-70-4C-NHE灵活的擦除功能和快速的擦除时间*2K字扇区擦除:18 ms(典型值)32K字块擦除:18 ms(典型值)全片擦除:70 ms(典型值)
SST39SF010A-70-4C-NHE 均一的小扇区:2K字和32K字
SST39SF010A-70-4C-NHE 商业级和工业级工作温度
SST39SF010A-70-4C-NHE可擦写次数:100,000次(典型值)
SST39SF010A-70-4C-NHE 数据保持时间:100年(最小值)
SST39SF010A-70-4C-NHE MPF+器件的其他功能
SST39SF010A-70-4C-NHE 擦除暂停
SST39SF010A-70-4C-NHE引导块
SST39SF010A-70-4C-NHE硬件复位功能
SST39SF010A-70-4C-NHE并行闪存的应用 蓝牙,GPS,,Wi-Fi/WiMAX,手机,DSL/电缆调制解调器, 服务器和路由器,机顶盒,数码相机,工业,汽车信息娱乐.
The SST39SF010A is a CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39SF010A writes (Program or Erase) with a 4.5-5.5V power supply, and conforms to JEDEC standard pinouts for x8 memories.
特性
Organized as 128K x8 / 256K x8 / 512K x8
Single 4.5-5.5V Read and Write Operations
Superior Reliability– Endurance: 100,000 Cycles (typical)– Greater than 100 years Data Retention
Low Power Consumption(typical values at 14 MHz)– Active Current: 10 mA (typical)– Standby Current: 30 µA (typical)
Sector-Erase Capability– Uniform 4 KByte sectors
Fast Read Access Time:– 55 ns– 70 ns
Latched Address and Data
Automatic Write Timing– Internal VPP Generation
Fast Erase and Byte-Program– Sector-Erase Time: 18 ms (typical)– Chip-Erase Time: 70 ms (typical)– Byte-Program Time: 14 µs (typical)– Chip Rewrite Time:2 seconds (typical) for SST39SF010A4 seconds (typical) for SST39SF020A8 seconds (typical) for SST39SF040
End-of-Write Detection– Toggle Bit– Data# Polling
TTL I/O Compatibility
JEDEC Standard– Flash EEPROM Pinouts and command sets
Packages Available– 32-lead PLCC– 32-lead TSOP (8mm x 14mm)– 32-pin PDIP
All devices are RoHS compliant
All non-Pb (lead-free) devices are RoHS compliant