ISSIIS61C256AL是一个非常高速、低功耗、32768字的8位静态RAM。它是用ISSI的高性能CMOS工艺制造的。这种高度可靠的过程加上创新的电路设计技术，产生的存取时间最快可达10纳秒。当CE为高（取消选择）时，器件采用待机模式，在该模式下，功耗可以通过CMOS输入电平降低到150微瓦（典型值）。通过使用有源低芯片使能（CE）输入和有源低输出使能（OE）输入，提供了简单的内存扩展。活动低写入启用（WE）控制存储器的写入和读取。IS61C256AL与其他32Kx8 SRAM的引脚兼容，有28SOJ和TSOP28（I型）封装。

IS61C256AL-12JLI特征

•高速访问时间：10、12 ns

•CMOS低功耗操作

-1兆瓦（典型）CMOS待机

-125兆瓦（典型）运行

•全静态操作：无时钟或刷新必修的

•TTL兼容的输入和输出

•单5V电源

•无铅产品

DESCRIPTION The ISSI IS61C256AL is a very high-speed, low power, 32,768 word by 8-bit static RAMs. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns maximum. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down to 150 µW (typical) with CMOS input levels. Easy memory expansion is provided by using an active LOW Chip Enable (CE) input and an active LOW Output Enable (OE) input. The active LOW Write Enable (WE) controls both writing and reading of the memory. The IS61C256AL is pin compatible with other 32Kx8 SRAMs and are available in 28-pin SOJ and TSOP (Type I) packages.

FEATURES

• High-speed access time: 10, 12 ns

• CMOS Low Power Operation

— 1 mW (typical) CMOS standby

— 125 mW (typical) operating

• Fully static operation: no clock or refresh required

• TTL compatible inputs and outputs

• Single 5V power supply

• Lead-free available