ISSIIS62C256AL/IS65C256AL是低功耗的,32768字8位CMOS静态RAM。它是捏造的采用ISIS的高性能、低功耗CMOS技术。当CE为高（取消选择）时，设备假定待机模式，功耗可以在CMOS输入电平下降低到150微瓦（典型值）。使用活动的低芯片选择（CE）输入和有源低输出启用（OE）输入。有效低写入启用（WE）控制内存的写入和读取。IS62C256AL/IS65C256AL与其他32Kx8 SRAM，封装SOP或TSOP（I型）ISSI IS62C256AL/IS65C256AL is of low power consumption, 32768 - word 8-bit CMOS static RAM. It is fabricated using ISIS's high-performance, low-power CMOS technology. When CE is high (deselect), the device assumes standby mode and power consumption can be reduced to 150 microwatts (typical value) at CMOS input levels. Use active Low chip Select (CE) inputs and active Low Output Enable (OE) inputs. Effective Low Write Enable (WE) controls the writing and reading of memory. IS62C256AL/IS65C256AL with other 32Kx8 SRAM, packaged SOP or TSOP (Type I)

IS62C256AL-45ULI特征

•接入时间：25 ns，45 ns

•低有功功率：200兆瓦（典型）

•低待机功率

-150微瓦（典型）CMOS待机

-15兆瓦（典型）运行

•全静态操作：无时钟或刷新必修的

•TTL兼容的输入和输出

•单5V电源

•无铅可用

•可提供工业和汽车温度

IS62C256AL-45ULI features

• Access time: 25 ns, 45 ns

• Low active power: 200 MW (typical)

• Low standby power

-150 microwatts (typical) CMOS standby

-15 MW (typical) operation

• Full static operation: no clock or refresh required

•TTL compatible input and output

• Single 5V power supply

• Lead-free available

• Industrial and automotive temperatures available

IS62C256AL-45ULI封装SOP28图 SOP28 diagram

IS62C256AL-45TLI封装TSOP28图

IS62C256AL-45ULI温度电压图 Temperature-voltage diagram

DESCRIPTION The ISSI IS62C256AL/IS65C256AL is a low power, 32,768 word by 8-bit CMOS static RAM. It is fabricated using ISSI's high-performance, low power CMOS technology. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down to 150 µW (typical) at CMOS input levels. Easy memory expansion is provided by using an active LOW Chip Select (CE) input and an active LOW Output Enable (OE) input. The active LOW Write Enable (WE) controls both writing and reading of the memory. The IS62C256AL/IS65C256AL is pin compatible with other 32Kx8 SRAMs in plastic SOP or TSOP (Type I) package.

FEATURES

• Access time: 25 ns, 45 ns

• Low active power: 200 mW (typical)

• Low standby power

— 150 µW (typical) CMOS standby

— 15 mW (typical) operating

• Fully static operation: no clock or refresh

required

• TTL compatible inputs and outputs

• Single 5V power supply

• Lead-free available

• Industrial and Automotive temperatures available

ISSIIS62C256AL/IS65C256AL是低功耗的,32768字8位CMOS静态RAM。它是捏造的采用ISIS的高性能、低功耗CMOS技术。当CE为高（取消选择）时，设备假定待机模式，功耗可以在CMOS输入电平下降低到150微瓦（典型值）。使用活动的低芯片选择（CE）输入和有源低输出启用（OE）输入。有效低写入启用（WE）控制内存的写入和读取。IS62C256AL/IS65C256AL与其他32Kx8 SRAM，封装SOP或TSOP（I型）

IS62C256AL-45ULI特征

•接入时间：25 ns，45 ns

•低有功功率：200兆瓦（典型）

•低待机功率

-150微瓦（典型）CMOS待机

-15兆瓦（典型）运行

•全静态操作：无时钟或刷新必修的

•TTL兼容的输入和输出

•单5V电源

•无铅可用

•可提供工业和汽车温度

IS62C256AL-45ULI封装SOP28图

IS62C256AL-45TLI封装TSOP28图

IS62C256AL-45ULI温度电压图