MIC4424YM-TR

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MIC4424YM-TR
BaoxingWei inventory：30 PCS
Mfg： MICROCHIP
Package： SOIC8
D/C： 21+
Note： Supply only imported original genuine Shenzhen and Hongkong in stock
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MIC4424YM-TR

The MIC4423/4424/4425 family are highly reliable BiCMOS/DMOS buffer/driver/MOSFET gate drivers. They are higher output current versions of the MIC4426/4427/4428, which are improved versions of the MIC426/427/428. All three families are pin-compatible. The MIC4423/4424/4425 drivers are capable of giving reliable service in more demanding electrical environments than their predecessors. They will not latch under any conditions within their power and voltage ratings. They can survive up to 5 V of noise spiking, of either polarity, on the ground pin. They can accept, without either damage or logic upset, up to half an amp of reverse current (either polarity) forced back into their outputs. The MIC4423/4424/4425 series of gate drivers are easier to use, more flexible in operation, and more forgiving than other CMOS or bipolar drivers currently available. Their BiCMOS/DMOS construction dissipates minimum power and provides rail-to-rail voltage swings. Primarily intended for driving power MOSFETs, the MIC4423/4424/4425 gate drivers are suitable for driving other loads (capacitive, resistive, or inductive) which require low impedance, high peak currents, and fast switching times. Heavily loaded clock lines, coaxial cables, or piezoelectric transducers are some examples. The only known limitation on loading is that total power dissipated in the driver must be kept within the maximum power dissipation limits of the package.

MIC4423/4424/4425系列是高度可靠的BiCMOS/DMOS缓冲器/驱动器/MOSFET栅极驱动器。它们是MIC4426/4427/4428的更高输出电流版本，是MIC426/427/428的改进版本。所有三个系列都是引脚兼容的。MIC4423/4424/4425驱动器能够在比其前辈更苛刻的电气环境中提供可靠的服务。在其额定功率和电压范围内的任何条件下，它们都不会闭锁。它们可以承受接地引脚上最高5 V的任意极性噪声尖峰。它们可以接受高达半安培的反向电流(任一极性)强制返回其输出，而不会造成损坏或逻辑混乱。与目前可用的其它CMOS或双极性驱动器相比，MIC4423/4424/4425系列栅极驱动器更易于使用，操作更灵活，容错能力更强。其BiCMOS/DMOS结构功耗最低，并提供轨到轨电压摆幅。MIC4423/4424/4425栅极驱动器主要用于驱动功率MOSFETs，也适用于驱动要求低阻抗、高峰值电流和快速开关时间的其它负载(容性、阻性或感性)。重载时钟线、同轴电缆或压电传感器就是一些例子。唯一已知的负载限制是驱动器的总功耗必须保持在封装的最大功耗范围内。

Product Features 产品特性

Reliable, low-power bipolar/CMOS/DMOS construction
Latch-up protected to > 500 mA reverse current
Logic input withstands swing to -5 V
High 3 A peak output current
Wide 4.5 V to 18 V operating range
Drives 1,800 pF capacitance in 25ns
Short < 40 ns typical delay time
Delay times consistent with in supply voltage change
Matched rise and fall times
TTL logic input independent of supply voltage
Low equivalent 6 pF input capacitance
Low supply current
3.5 mA with logic 1 input
350 µA with logic 0 input
Low 3.5 Ω typical output impedance
Output voltage swings within 25 mV of ground or V_S.
''426/7/8-, ''1426/7/8-, ''4426/7/8-compatible pinout
Inverting, noninverting, and differential configurations
可靠的低功耗双极性/CMOS/DMOS结构
反向电流> 500 mA时受闩锁保护
逻辑输入可承受-5 V的摆幅
高3 A峰值输出电流
4.5 V至18 V的宽工作电压范围
在25ns内驱动1，800 pF电容
典型延迟时间短，小于40 ns
延迟时间与电源电压变化一致
匹配的上升和下降时间
独立于电源电压的TTL逻辑输入
低等效6 pF输入电容
低电源电流
逻辑1输入时为3.5 mA
350 A，逻辑0输入
低3.5ω典型输出阻抗
输出电压摆幅在接地或V的25 mV范围内
_S.
“426/7/8-”、“1426/7/8-”、“4426/7/8”兼容引脚排列
反相、同相和差分配置

Parametrics 参数化

MOSFET Driver Type	Low Side
Driver Type	Dual
Configuration	Non-Inverting
Maximum Supply Voltage (V)	18
Peak Source Output (A)	3
Peak Sink Output (A)	3
Source Resistance (Ω)	5
Sink Resistance (Ω)	5
Propagation Delay t_D1 (ns)	33
Propagation Delay t_D2 (ns)	38
Rise Time (t_R, ns)	23
Fall Time (t_F, ns)	25
Capacitive Load Drive	1,800 pF in 23 ns

MOSFET驱动器类型	低侧
驱动程序类型	双重的
配置	非反相
最大电源电压(V)	18
峰值源输出(A)	3
峰值吸电流输出(A)	3
源电阻(ω)	5
吸电流电阻(ω)	5
传播延迟t_D1(纳秒)	33
传播延迟t_D2(纳秒)	38
上升时间(t_R，ns)	23
下降时间(t_F，ns)	25
容性负载驱动	1800 pF(23 ns)

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Product Features 产品特性

Parametrics 参数化

Product Features 产品特性

Parametrics 参数化

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