SST25VF080B-50-4I-S2AF-T

Product Description 

25 series Serial Flash family features a four-wire, SPIcompatible interface that allows for a low pin-count package which occupies less board space and ultimately lowers total system costs. The SST25VF080B devices are enhanced with improved operating frequency and lower power consumption. SST25VF080B SPI serial flash memories are manufactured with proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST25VF080B devices significantly improve performance and reliability, while lowering power consumption. The devices write (Program or Erase) with a single power supply of 2.7-3.6V for SST25VF080B. The total energy consumed is a function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash memory technologies. The SST25VF080B device is offered in 8-lead SOIC (200 mils), 8-contact WSON (6mm x 5mm), and 8-lead PDIP (300 mils) packages. See Figure 2-1 for pin assignments.

产品描述

25系列串行Flash系列具有四线制，spiccompatible接口，允许低引脚数包，占用更少的板空间，最终降低总系统成本。SST25VF080B器件经过改进，提高了工作频率，降低了功耗。SST25VF080B SPI串行闪存采用专有的高性能CMOS SuperFlash技术制造。与其他方法相比，分离式栅室设计和厚氧化物隧道注入器具有更好的可靠性和可制造性。SST25VF080B器件显著提高了性能和可靠性，同时降低了功耗。该设备写入(程序或擦除)与单个电源2.7-3.6V SST25VF080B。所消耗的总能量是外加电压、电流和外加时间的函数。由于在任何给定的电压范围内，SuperFlash技术使用更少的电流来编程，并具有更短的擦除时间，在任何擦除或程序操作中消耗的总能量比其他闪存技术要少。SST25VF080B器件提供8引脚SOIC (200 mils)， 8引脚WSON (6mm x 5mm)和8引脚PDIP (300 mils)封装。引脚分配参见图2-1。

Features 

• Single Voltage Read and Write Operations - 2.7-3.6V 

• Serial Interface Architecture - SPI Compatible: Mode 0 and Mode 3 

• High Speed Clock Frequency - 50/66 MHz conditional (see Table 5-6) 

• Superior Reliability - Endurance: 100,000 Cycles (typical) - Greater than 100 years Data Retention • Low Power Consumption: - Active Read Current: 10 mA (typical) - Standby Current: 5 µA (typical) • Flexible Erase Capability - Uniform 4 KByte sectors - Uniform 32 KByte overlay blocks - Uniform 64 KByte overlay blocks 

• Fast Erase and Byte-Program: - Chip-Erase Time: 35 ms (typical) - Sector-/Block-Erase Time: 18 ms (typical) - Byte-Program Time: 7 µs (typical) 

• Auto Address Increment (AAI) Programming - Decrease total chip programming time over Byte-Program operations • End-of-Write Detection - Software polling the BUSY bit in Status Register - Busy Status readout on SO pin in AAI Mode 

• Hold Pin (HOLD#) - Suspends a serial sequence to the memory without deselecting the device 

• Write Protection (WP#) - Enables/Disables the Lock-Down function of the status register 

• Software Write Protection - Write protection through Block-Protection bits in status register 

• Temperature Range - Commercial: 0°C to +70°C - Industrial: -40°C to +85°C

特性

•单电压读写操作- 2.7-3.6V

•串行接口架构- SPI兼容:模式0和模式3

•高速时钟频率- 50/ 66mhz有条件(见表5-6)

•高可靠性-耐久性:100,000个周期(典型)-超过100年的数据保留•低功耗:-有源读电流:10 mA(典型)-待机电流:5µA(典型)•灵活的擦除能力-均匀4kbyte扇区-均匀32kbyte覆盖块-均匀64kbyte覆盖块

•快速擦除和字节程序:-芯片擦除时间:35 ms(典型)-扇区/块擦除时间:18 ms(典型)-字节程序时间:7µs(典型)

•自动地址增量(AAI)编程-在字节程序操作上减少总芯片编程时间•写结束检测-软件轮询状态寄存器中的BUSY位-在AAI模式中SO引脚上的BUSY状态读出

•Hold Pin (Hold #) -在不取消选择设备的情况下悬挂一个串行序列到内存

•写保护(WP#) -启用/禁用状态寄存器的锁定功能

•软件写保护-通过状态寄存器中的块保护位进行写保护

•温度范围—商业:0°C ~ +70°C—工业:-40°C ~ +85°C

SST25VF080B-50-4I-S2AF-T

Product Description 

25 series Serial Flash family features a four-wire, SPIcompatible interface that allows for a low pin-count package which occupies less board space and ultimately lowers total system costs. The SST25VF080B devices are enhanced with improved operating frequency and lower power consumption. SST25VF080B SPI serial flash memories are manufactured with proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST25VF080B devices significantly improve performance and reliability, while lowering power consumption. The devices write (Program or Erase) with a single power supply of 2.7-3.6V for SST25VF080B. The total energy consumed is a function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash memory technologies. The SST25VF080B device is offered in 8-lead SOIC (200 mils), 8-contact WSON (6mm x 5mm), and 8-lead PDIP (300 mils) packages. See Figure 2-1 for pin assignments.

产品描述

25系列串行Flash系列具有四线制，spiccompatible接口，允许低引脚数包，占用更少的板空间，最终降低总系统成本。SST25VF080B器件经过改进，提高了工作频率，降低了功耗。SST25VF080B SPI串行闪存采用专有的高性能CMOS SuperFlash技术制造。与其他方法相比，分离式栅室设计和厚氧化物隧道注入器具有更好的可靠性和可制造性。SST25VF080B器件显著提高了性能和可靠性，同时降低了功耗。该设备写入(程序或擦除)与单个电源2.7-3.6V SST25VF080B。所消耗的总能量是外加电压、电流和外加时间的函数。由于在任何给定的电压范围内，SuperFlash技术使用更少的电流来编程，并具有更短的擦除时间，在任何擦除或程序操作中消耗的总能量比其他闪存技术要少。SST25VF080B器件提供8引脚SOIC (200 mils)， 8引脚WSON (6mm x 5mm)和8引脚PDIP (300 mils)封装。引脚分配参见图2-1。

Features 

• Single Voltage Read and Write Operations - 2.7-3.6V 

• Serial Interface Architecture - SPI Compatible: Mode 0 and Mode 3 

• High Speed Clock Frequency - 50/66 MHz conditional (see Table 5-6) 

• Superior Reliability - Endurance: 100,000 Cycles (typical) - Greater than 100 years Data Retention • Low Power Consumption: - Active Read Current: 10 mA (typical) - Standby Current: 5 µA (typical) • Flexible Erase Capability - Uniform 4 KByte sectors - Uniform 32 KByte overlay blocks - Uniform 64 KByte overlay blocks 

• Fast Erase and Byte-Program: - Chip-Erase Time: 35 ms (typical) - Sector-/Block-Erase Time: 18 ms (typical) - Byte-Program Time: 7 µs (typical) 

• Auto Address Increment (AAI) Programming - Decrease total chip programming time over Byte-Program operations • End-of-Write Detection - Software polling the BUSY bit in Status Register - Busy Status readout on SO pin in AAI Mode 

• Hold Pin (HOLD#) - Suspends a serial sequence to the memory without deselecting the device 

• Write Protection (WP#) - Enables/Disables the Lock-Down function of the status register 

• Software Write Protection - Write protection through Block-Protection bits in status register 

• Temperature Range - Commercial: 0°C to +70°C - Industrial: -40°C to +85°C

特性

•单电压读写操作- 2.7-3.6V

•串行接口架构- SPI兼容:模式0和模式3

•高速时钟频率- 50/ 66mhz有条件(见表5-6)

•高可靠性-耐久性:100,000个周期(典型)-超过100年的数据保留•低功耗:-有源读电流:10 mA(典型)-待机电流:5µA(典型)•灵活的擦除能力-均匀4kbyte扇区-均匀32kbyte覆盖块-均匀64kbyte覆盖块

•快速擦除和字节程序:-芯片擦除时间:35 ms(典型)-扇区/块擦除时间:18 ms(典型)-字节程序时间:7µs(典型)

•自动地址增量(AAI)编程-在字节程序操作上减少总芯片编程时间•写结束检测-软件轮询状态寄存器中的BUSY位-在AAI模式中SO引脚上的BUSY状态读出

•Hold Pin (Hold #) -在不取消选择设备的情况下悬挂一个串行序列到内存

•写保护(WP#) -启用/禁用状态寄存器的锁定功能

•软件写保护-通过状态寄存器中的块保护位进行写保护

•温度范围—商业:0°C ~ +70°C—工业:-40°C ~ +85°C