The SST39VF040 is a 5124K x8CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF040 device writes (Program or Erase) with a 2.7-3.6V power supply. The device conforms to JEDEC standard pinouts for x8 memories.

Additional Features

• Organized as 64K x8 / 128K x8 / 256K x8 / 512K x8

• Single Voltage Read and Write Operations– 3.0-3.6V for SST39LF512/010/020/040– 2.7-3.6V for SST39VF512/010/020/040

• Superior Reliability– Endurance: 100,000 Cycles (typical)– Greater than 100 years Data Retention

• Low Power Consumption(typical values at 14 MHz)– Active Current: 5 mA (typical)– Standby Current: 1 µA (typical)

• Sector-Erase Capability– Uniform 4 KByte sectors

• Fast Read Access Time: 45 ns ; 55 ns ; 70 ns

• Latched Address and Data

• Fast Erase and Byte-Program:– Sector-Erase Time: 18 ms (typical)– Chip-Erase Time: 70 ms (typical)– Byte-Program Time: 14 µs (typical)– Chip Rewrite Time:4 seconds (typical) for SST39LF/VF020

• Automatic Write Timing– Internal VPP Generation

• End-of-Write Detection– Toggle Bit– Data# Polling

• CMOS I/O Compatibility

• JEDEC Standard– Flash EEPROM Pinouts and command sets

• Packages Available– 32-lead PLCC– 32-lead TSOP (8mm x 14mm)– 48-ball TFBGA (6mm x 8mm)– 34-ball WFBGA (4mm x 6mm) for 1M and 2M

• All devices are RoHS compliant

The SST39VF040 is a 5124K x8CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF040 device writes (Program or Erase) with a 2.7-3.6V power supply. The device conforms to JEDEC standard pinouts for x8 memories.

Additional Features

• Organized as 64K x8 / 128K x8 / 256K x8 / 512K x8

• Single Voltage Read and Write Operations– 3.0-3.6V for SST39LF512/010/020/040– 2.7-3.6V for SST39VF512/010/020/040

• Superior Reliability– Endurance: 100,000 Cycles (typical)– Greater than 100 years Data Retention

• Low Power Consumption(typical values at 14 MHz)– Active Current: 5 mA (typical)– Standby Current: 1 µA (typical)

• Sector-Erase Capability– Uniform 4 KByte sectors

• Fast Read Access Time: 45 ns ; 55 ns ; 70 ns

• Latched Address and Data

• Fast Erase and Byte-Program:– Sector-Erase Time: 18 ms (typical)– Chip-Erase Time: 70 ms (typical)– Byte-Program Time: 14 µs (typical)– Chip Rewrite Time:4 seconds (typical) for SST39LF/VF020

• Automatic Write Timing– Internal VPP Generation

• End-of-Write Detection– Toggle Bit– Data# Polling

• CMOS I/O Compatibility

• JEDEC Standard– Flash EEPROM Pinouts and command sets

• Packages Available– 32-lead PLCC– 32-lead TSOP (8mm x 14mm)– 48-ball TFBGA (6mm x 8mm)– 34-ball WFBGA (4mm x 6mm) for 1M and 2M

• All devices are RoHS compliant