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SST39VF1681
16Mb 2.7-3.6V Parallel Flash
Status: In Production
Features:
Organized as 2M x8
Low Power Consumption (typical values at 5 MHz) – Active Current: 9 mA (typical) – Standby Current: 3 µA (typical) – Auto Low Power Mode: 3 µA (typical)
Hardware Block-Protection/WP# Input Pin – Top Block-Protection (top 64 KByte) for SST39VF1682 – Bottom Block-Protection (bottom 64 KByte) for SST39VF1681
Sector-Erase Capability – Uniform 4 KByte sectors
Block-Erase Capability – Uniform 64 KByte blocks
Chip-Erase Capability
The SST39VF1681 is a 2M x8 CMOS Multi-Purpose Flash Plus (MPF+) manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF1681 writes (Program or Erase) with a 2.7-3.6V power supply. This device conforms to JEDEC standard pinouts for x8 memories.
Additional Features
Organized as 2M x8
Low Power Consumption (typical values at 5 MHz)– Active Current: 9 mA (typical)– Standby Current: 3 µA (typical)– Auto Low Power Mode: 3 µA (typical)
Hardware Block-Protection/WP# Input Pin– Top Block-Protection (top 64 KByte)for SST39VF1682– Bottom Block-Protection (bottom 64 KByte)for SST39VF1681
Sector-Erase Capability– Uniform 4 KByte sectors
Block-Erase Capability– Uniform 64 KByte blocks
Chip-Erase Capability
Erase-Suspend/Erase-Resume Capabilities
Hardware Reset Pin (RST#)
Security-ID Feature– SST: 128 bits; User: 128 bits
Fast Erase and Byte-Program:– Sector-Erase Time: 18 ms (typical)– Block-Erase Time: 18 ms (typical)– Chip-Erase Time: 40 ms (typical)– Byte-Program Time: 7 µs (typical)
Packages Available– 48-ball TFBGA (6mm x 8mm)– 48-lead TSOP (12mm x 20mm)
All non-Pb (lead-free) devices are RoHS compliant