SST39VF3201B

Features:

• Organized as 2M x16

• Low Power Consumption (typical values at 5 MHz) – Active Current: 6 mA (typical) – Standby Current: 4 µA (typical) – Auto Low Power Mode: 4 µA (typical)

• Hardware Block-Protection/WP# Input Pin – Top Block-Protection (top 32 KWord) for SST39VF3202B – Bottom Block-Protection (bottom 32 KWord) for SST39VF3201B

• Sector-Erase Capability – Uniform 2 KWord sectors

• Block-Erase Capability – Uniform 32 KWord blocks

• Chip-Erase Capability

  Summary

  The SST39VF3201B device is a 2M x16 CMOS Multi- Purpose Flash Plus (MPF+) manufactured with SST's proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF3201B writes (Program or Erase) with a 2.7-3.6V power supply. This device conforms to JEDEC standard pin assignments for x16 memories.

  Additional Features
  

• Organized as 2M x16

• Low Power Consumption (typical values at 5 MHz)– Active Current: 6 mA (typical)– Standby Current: 4 µA (typical)– Auto Low Power Mode: 4 µA (typical)

• Hardware Block-Protection/WP# Input Pin– Top Block-Protection (top 32 KWord)for SST39VF3202B– Bottom Block-Protection (bottom 32 KWord)for SST39VF3201B

• Sector-Erase Capability– Uniform 2 KWord sectors

• Block-Erase Capability– Uniform 32 KWord blocks

• Chip-Erase Capability

• Erase-Suspend/Erase-Resume Capabilities

• Hardware Reset Pin (RST#)

• Security-ID Feature– SST: 128 bits; User: 128 words

• Fast Erase and Word-Program:– Sector-Erase Time: 18 ms (typical)– Block-Erase Time: 18 ms (typical)– Chip-Erase Time: 35 ms (typical)– Word-Program Time: 7 µs (typical)

• Packages Available– 48-lead TSOP (12mm x 20mm)– 48-ball TFBGA (6mm x 8mm)

• All non-Pb (lead-free) devices are RoHS compliant

SST39VF3201B

Features:

• Organized as 2M x16

• Low Power Consumption (typical values at 5 MHz) – Active Current: 6 mA (typical) – Standby Current: 4 µA (typical) – Auto Low Power Mode: 4 µA (typical)

• Hardware Block-Protection/WP# Input Pin – Top Block-Protection (top 32 KWord) for SST39VF3202B – Bottom Block-Protection (bottom 32 KWord) for SST39VF3201B

• Sector-Erase Capability – Uniform 2 KWord sectors

• Block-Erase Capability – Uniform 32 KWord blocks

• Chip-Erase Capability

  Summary

  The SST39VF3201B device is a 2M x16 CMOS Multi- Purpose Flash Plus (MPF+) manufactured with SST's proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF3201B writes (Program or Erase) with a 2.7-3.6V power supply. This device conforms to JEDEC standard pin assignments for x16 memories.

  Additional Features
  

  • Organized as 2M x16

  • Low Power Consumption (typical values at 5 MHz)– Active Current: 6 mA (typical)– Standby Current: 4 µA (typical)– Auto Low Power Mode: 4 µA (typical)

  • Hardware Block-Protection/WP# Input Pin– Top Block-Protection (top 32 KWord)for SST39VF3202B– Bottom Block-Protection (bottom 32 KWord)for SST39VF3201B

  • Sector-Erase Capability– Uniform 2 KWord sectors

  • Block-Erase Capability– Uniform 32 KWord blocks

  • Chip-Erase Capability

  • Erase-Suspend/Erase-Resume Capabilities

  • Hardware Reset Pin (RST#)

  • Security-ID Feature– SST: 128 bits; User: 128 words

  • Fast Erase and Word-Program:– Sector-Erase Time: 18 ms (typical)– Block-Erase Time: 18 ms (typical)– Chip-Erase Time: 35 ms (typical)– Word-Program Time: 7 µs (typical)

  • Packages Available– 48-lead TSOP (12mm x 20mm)– 48-ball TFBGA (6mm x 8mm)

  • All non-Pb (lead-free) devices are RoHS compliant