SST39VF512

 Status: End of Life

Features:

Organized as 64K x8 / 128K x8 / 256K x8 / 512K x8

Low Power Consumption – Active Current: 5 mA (typical) – Standby Current: 1 µA (typical)

Sector-Erase Capability – Uniform 4 KByte sectors

Fast Erase and Byte-Program: – Sector-Erase Time: 18 ms (typical) – Chip-Erase Time: 70 ms (typical) – Byte-Program Time: 14 µs (typical) – Chip Rewrite Time: 1 second (typical) for SST39LF/VF512

Packages Available – 32-lead PLCC – 32-lead TSOP (8mm x 14mm) – 48-ball TFBGA (6mm x 8mm) All non-Pb(lead-free) devices are RoHS compliant

Summary

• Organized as 64K x8 / 128K x8 / 256K x8 / 512K x8

• Low Power Consumption– Active Current: 5 mA (typical)– Standby Current: 1 µA (typical)

• Sector-Erase Capability– Uniform 4 KByte sectors

• Fast Erase and Byte-Program:– Sector-Erase Time: 18 ms (typical)– Chip-Erase Time: 70 ms (typical)– Byte-Program Time: 14 µs (typical)– Chip Rewrite Time:1 second (typical) for SST39LF/VF512

• Packages Available– 32-lead PLCC– 32-lead TSOP (8mm x 14mm)– 48-ball TFBGA (6mm x 8mm)All non-Pb(lead-free) devices are RoHS compliant

• Parametrics
• Name

  Value

  Density

  512 Kbit

  Op. Volt Range (V)

  2.7 to 3.6

  Read Access Time

  70 ns

  Endurance

  100,000

SST39VF512

 Status: End of Life

Features:

• Organized as 64K x8 / 128K x8 / 256K x8 / 512K x8

  Low Power Consumption – Active Current: 5 mA (typical) – Standby Current: 1 µA (typical)

  Sector-Erase Capability – Uniform 4 KByte sectors

  Fast Erase and Byte-Program: – Sector-Erase Time: 18 ms (typical) – Chip-Erase Time: 70 ms (typical) – Byte-Program Time: 14 µs (typical) – Chip Rewrite Time: 1 second (typical) for SST39LF/VF512

  Packages Available – 32-lead PLCC – 32-lead TSOP (8mm x 14mm) – 48-ball TFBGA (6mm x 8mm) All non-Pb(lead-free) devices are RoHS compliant

  Summary

  The SST39VF512 is a 64K x8CMOS Multi-Purpose Flash (MPF) manufactured with proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF512 device writes (Program or Erase) with a 2.7-3.6V power supply. The device conforms to JEDEC standard pinouts for x8 memories.

  Additional Features
  

  • Organized as 64K x8 / 128K x8 / 256K x8 / 512K x8

  • Low Power Consumption– Active Current: 5 mA (typical)– Standby Current: 1 µA (typical)

  • Sector-Erase Capability– Uniform 4 KByte sectors

  • Fast Erase and Byte-Program:– Sector-Erase Time: 18 ms (typical)– Chip-Erase Time: 70 ms (typical)– Byte-Program Time: 14 µs (typical)– Chip Rewrite Time:1 second (typical) for SST39LF/VF512

  • Packages Available– 32-lead PLCC– 32-lead TSOP (8mm x 14mm)– 48-ball TFBGA (6mm x 8mm)All non-Pb(lead-free) devices are RoHS compliant

  • Parametrics
  • Name

    Value

    Density

    512 Kbit

    Op. Volt Range (V)

    2.7 to 3.6

    Read Access Time

    70 ns

    Endurance

    100,000