*Not Recommended For New Design*
The SST39VF800A is a 512K x16 CMOS Multi-Purpose Flash (MPF) manufactured with proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF800A writes (Program or Erase) with a 2.7-3.6V power supply. This device conforms to JEDEC standard pinouts for x16 memories.

Additional Features

• Organized as 512K x16

• Single Voltage Read and Write Operations– 2.7-3.6V for SST39VF200A/400A/800A

• Superior Reliability– Endurance: 100,000 Cycles (typical)– Greater than 100 years Data Retention

• Low Power Consumption(typical values at 14 MHz)– Active Current: 9 mA (typical)– Standby Current: 3 µA (typical)

• Sector-Erase Capability– Uniform 2 KWord sectors

• Block-Erase Capability– Uniform 32 KWord blocks

• Fast Read Access Time– 70 ns for SST39VF800A

• Latched Address and Data

• Fast Erase and Word-Program– Sector-Erase Time: 18 ms (typical)– Block-Erase Time: 18 ms (typical)– Chip-Erase Time: 70 ms (typical)– Word-Program Time: 14 µs (typical)– Chip Rewrite Time:8 seconds (typical) for SST39VF800A

• Automatic Write Timing– Internal VPP Generation

• End-of-Write Detection– Toggle Bit– Data# Polling

• CMOS I/O Compatibility

• JEDEC Standard– Flash EEPROM Pinouts and command sets

• Packages Available– 48-lead TSOP (12mm x 20mm)– 48-ball TFBGA (6mm x 8mm)– 48-ball WFBGA (4mm x 6mm)– 48-bump XFLGA (4mm x 6mm) – 4 and 8Mbit

• All non-Pb (lead-free) devices are RoHS compliant

*Not Recommended For New Design*
The SST39VF800A is a 512K x16 CMOS Multi-Purpose Flash (MPF) manufactured with proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF800A writes (Program or Erase) with a 2.7-3.6V power supply. This device conforms to JEDEC standard pinouts for x16 memories.

Additional Features

• Organized as 512K x16

• Single Voltage Read and Write Operations– 2.7-3.6V for SST39VF200A/400A/800A

• Superior Reliability– Endurance: 100,000 Cycles (typical)– Greater than 100 years Data Retention

• Low Power Consumption(typical values at 14 MHz)– Active Current: 9 mA (typical)– Standby Current: 3 µA (typical)

• Sector-Erase Capability– Uniform 2 KWord sectors

• Block-Erase Capability– Uniform 32 KWord blocks

• Fast Read Access Time– 70 ns for SST39VF800A

• Latched Address and Data

• Fast Erase and Word-Program– Sector-Erase Time: 18 ms (typical)– Block-Erase Time: 18 ms (typical)– Chip-Erase Time: 70 ms (typical)– Word-Program Time: 14 µs (typical)– Chip Rewrite Time:8 seconds (typical) for SST39VF800A

• Automatic Write Timing– Internal VPP Generation

• End-of-Write Detection– Toggle Bit– Data# Polling

• CMOS I/O Compatibility

• JEDEC Standard– Flash EEPROM Pinouts and command sets

• Packages Available– 48-lead TSOP (12mm x 20mm)– 48-ball TFBGA (6mm x 8mm)– 48-ball WFBGA (4mm x 6mm)– 48-bump XFLGA (4mm x 6mm) – 4 and 8Mbit

• All non-Pb (lead-free) devices are RoHS compliant