TS5A3159DCKR

The TS5A3159 device is a single-pole double-throw (SPDT) analog switch that is designed to operate from 1.65 V to 5.5 V. The device offers a low ON-state resistance and an excellent ON-state resistance matching, with the break-before-make feature to prevent signal distortion during the transferring of a signal from one channel to another. The device has excellent total harmonic distortion (THD) performance and consumes very low power. These features make this device suitable for portable audio applications. TS5A3159器件是单极双掷(SPDT)模拟开关，设计工作电压为1.65 V至5.5 V。该器件提供低导通状态电阻和出色的导通状态电阻匹配，具有制造前断开功能，可防止信号从一个通道传输到另一个通道期间的信号失真。该器件具有优良的总谐波失真(THD)性能和极低的功耗。这些特点使该设备适合便携式音频应用。

Parameters

参数

Configuration 2:1 SPDT

Number of channels 1

Power supply voltage - single (V) 1.8, 2.5, 3.3, 5

Protocols Analog

Ron (typ) (Ω)       0.75

CON (typ) (pF)     84

ON-state leakage current (max) (µA)   0.04

Supply current (typ) (µA)     0.01

Bandwidth (MHz) 100

Operating temperature range (°C) -40 to 85

Features Break-before-make

Input/output continuous current (max) (mA) 200

Rating Catalog

Drain supply voltage (max) (V)      5.5

Supply voltage (max) (V)             5.5

配置2:1 SPDT

通道数1

电源电压-单(V) 1.8、2.5、3.3、5

协议模拟

罗恩(打字)(Ω) 0.75

CON (type) (pF) 84

导通状态泄漏电流(最大)(µA) 0.04

电源电流(类型)(µA) 0.01

带宽(MHz) 100

工作温度范围(℃)-40 ~ 85

功能先断后通

输入/输出连续电流(最大)(mA) 200

评级目录

漏电源电压(最大)(V) 5.5

电源电压(最大)(V) 5.5

Feature

特点

Specified Break-Before-Make Switching

Low ON-State Resistance (1 Ω)

Control Inputs are 5-V Tolerant

Low Charge Injection

Excellent ON-Resistance Matching

Low Total Harmonic Distortion

1.65-V to 5.5-V Single-Supply Operation

Latch-Up Performance Exceeds 100 mA

Per JESD 78, Class II

ESD Performance Tested Per JESD 22

2000-V Human-Body Model

(A114-B, Class II)

1000-V Charged-Device Model (C101)

指定的断开前闭合开关

低导通状态电阻(1 Ω)

控制输入是5v容忍

低电荷注入

优异的导通电阻匹配

低总谐波失真

1.65 v至5.5 v单电源操作

锁存性能超过100ma

Per JESD 78, Class II

ESD性能测试按JESD 22

2000-V人体模型

(A114-B，第II类)

1000 v充电器件型号(C101)

TS5A3159DCKR

The TS5A3159 device is a single-pole double-throw (SPDT) analog switch that is designed to operate from 1.65 V to 5.5 V. The device offers a low ON-state resistance and an excellent ON-state resistance matching, with the break-before-make feature to prevent signal distortion during the transferring of a signal from one channel to another. The device has excellent total harmonic distortion (THD) performance and consumes very low power. These features make this device suitable for portable audio applications. TS5A3159器件是单极双掷(SPDT)模拟开关，设计工作电压为1.65 V至5.5 V。该器件提供低导通状态电阻和出色的导通状态电阻匹配，具有制造前断开功能，可防止信号从一个通道传输到另一个通道期间的信号失真。该器件具有优良的总谐波失真(THD)性能和极低的功耗。这些特点使该设备适合便携式音频应用。

Parameters

参数

Configuration 2:1 SPDT

Number of channels 1

Power supply voltage - single (V) 1.8, 2.5, 3.3, 5

Protocols Analog

Ron (typ) (Ω)       0.75

CON (typ) (pF)     84

ON-state leakage current (max) (µA)   0.04

Supply current (typ) (µA)     0.01

Bandwidth (MHz) 100

Operating temperature range (°C) -40 to 85

Features Break-before-make

Input/output continuous current (max) (mA) 200

Rating Catalog

Drain supply voltage (max) (V)      5.5

Supply voltage (max) (V)             5.5

配置2:1 SPDT

通道数1

电源电压-单(V) 1.8、2.5、3.3、5

协议模拟

罗恩(打字)(Ω) 0.75

CON (type) (pF) 84

导通状态泄漏电流(最大)(µA) 0.04

电源电流(类型)(µA) 0.01

带宽(MHz) 100

工作温度范围(℃)-40 ~ 85

功能先断后通

输入/输出连续电流(最大)(mA) 200

评级目录

漏电源电压(最大)(V) 5.5

电源电压(最大)(V) 5.5

Feature

特点

Specified Break-Before-Make Switching

Low ON-State Resistance (1 Ω)

Control Inputs are 5-V Tolerant

Low Charge Injection

Excellent ON-Resistance Matching

Low Total Harmonic Distortion

1.65-V to 5.5-V Single-Supply Operation

Latch-Up Performance Exceeds 100 mA

Per JESD 78, Class II

ESD Performance Tested Per JESD 22

2000-V Human-Body Model

(A114-B, Class II)

1000-V Charged-Device Model (C101)

指定的断开前闭合开关

低导通状态电阻(1 Ω)

控制输入是5v容忍

低电荷注入

优异的导通电阻匹配

低总谐波失真

1.65 v至5.5 v单电源操作

锁存性能超过100ma

Per JESD 78, Class II

ESD性能测试按JESD 22

2000-V人体模型

(A114-B，第II类)

1000 v充电器件型号(C101)