W29N01HVSINA

The W29N01HV (1G-bit) NAND flash provides a storage solution for embedded systems with limited space, pins, and power. It is ideal for shading code to RAM, solid-state applications and storing media data such as voice, video, text and photos. The device operates on a single 2.7V to 3.6V power supply with active current consumption as low as 25mA 10uA CMOS standby current. The memory array totals 138,412,032 bytes and is organized into 1,024 erasable blocks of 135,168 bytes. Each block consists of 64 programmable pages, 2112 bytes each. Each page contains 2,048 bytes of primary data storage area and 64 bytes of secondary data area (the secondary area is usually used for error management functions). The W29N01HV supports the standard NAND flash interface and uses a multiway 8-bit bus to transfer data, addresses, and command instructions. CLE, ALE, #CE, #RE and #WE are the five control signal processing bus interface protocols. In addition, the device has two other signal pins, #WP(write protection) and RY/#BY(Ready/Busy), for monitoring device status.

The W29N01HVSINA is a NAND Flash memory chip manufactured by Winbond. The following are its features and specifications:

Feature

1. NAND Flash memory: W29N01HVSINA is a memory chip that uses NAND Flash technology and can be used for data storage and read and write operations.

2. Capacity: The W29N01HVSINA has a capacity of 1GB (8 Gbit), which can store a large amount of data.

3. Fast read and write speed: W29N01HVSINA supports fast read and write operations and provides efficient data access performance.

4. Block and Page structure: W29N01HVSINA uses block and page structure to organize data, which can achieve high-density storage and flexible data management.

5. Reliability and durability: W29N01HVSINA has good reliability and durability, and adopts advanced memory technology and error correction mechanism to provide stable data storage and protection.

Specification

1. Power supply voltage: The power supply voltage range of W29N01HVSINA is 2.7V to 3.6V.

2. Interface: W29N01HVSINA supports standard NAND Flash 8-bit data interface.

3. Operating temperature range: W29N01HVSINA's operating temperature range is -40°C to 85°C, suitable for applications under various environmental conditions.

4. Package: W29N01HVSINA usually adopts SOP (Small Outline Package) or WSON (Very Very Thin Small Outline No-Lead) package form, which is easy to install and weld on the circuit board.

In summary, the W29N01HVSINA is a 1GB capacity NAND Flash memory chip with fast read/write speed, reliability and durability for a variety of data storage and read/write applications.

W29N01HVSINA

The W29N01HV (1G-bit) NAND flash provides a storage solution for embedded systems with limited space, pins, and power. It is ideal for shading code to RAM, solid-state applications and storing media data such as voice, video, text and photos. The device operates on a single 2.7V to 3.6V power supply with active current consumption as low as 25mA 10uA CMOS standby current. The memory array totals 138,412,032 bytes and is organized into 1,024 erasable blocks of 135,168 bytes. Each block consists of 64 programmable pages, 2112 bytes each. Each page contains 2,048 bytes of primary data storage area and 64 bytes of secondary data area (the secondary area is usually used for error management functions). The W29N01HV supports the standard NAND flash interface and uses a multiway 8-bit bus to transfer data, addresses, and command instructions. CLE, ALE, #CE, #RE and #WE are the five control signal processing bus interface protocols. In addition, the device has two other signal pins, #WP(write protection) and RY/#BY(Ready/Busy), for monitoring device status.

The W29N01HVSINA is a NAND Flash memory chip manufactured by Winbond. The following are its features and specifications:

Feature

1. NAND Flash memory: W29N01HVSINA is a memory chip that uses NAND Flash technology and can be used for data storage and read and write operations.

2. Capacity: The W29N01HVSINA has a capacity of 1GB (8 Gbit), which can store a large amount of data.

3. Fast read and write speed: W29N01HVSINA supports fast read and write operations and provides efficient data access performance.

4. Block and Page structure: W29N01HVSINA uses block and page structure to organize data, which can achieve high-density storage and flexible data management.

5. Reliability and durability: W29N01HVSINA has good reliability and durability, and adopts advanced memory technology and error correction mechanism to provide stable data storage and protection.

Specification

1. Power supply voltage: The power supply voltage range of W29N01HVSINA is 2.7V to 3.6V.

2. Interface: W29N01HVSINA supports standard NAND Flash 8-bit data interface.

3. Operating temperature range: W29N01HVSINA's operating temperature range is -40°C to 85°C, suitable for applications under various environmental conditions.

4. Package: W29N01HVSINA usually adopts SOP (Small Outline Package) or WSON (Very Very Thin Small Outline No-Lead) package form, which is easy to install and weld on the circuit board.

In summary, the W29N01HVSINA is a 1GB capacity NAND Flash memory chip with fast read/write speed, reliability and durability for a variety of data storage and read/write applications.