SST39VF1601

Features:

• Organized as 1M x16: SST39VF1601/1602

• Low Power Consumption (typical values at 5 MHz)– Active Current: 9 mA (typical)– Standby Current: 3 µA (typical)– Auto Low Power Mode: 3 µA (typical)

• Hardware Block-Protection/WP# Input Pin– Top Block-Protection (top 32 KWord)for SST39VF1602– Bottom Block-Protection (bottom 32 KWord)for SST39VF1601

• Sector-Erase Capability– Uniform 2 KWord sectors

• Block-Erase Capability– Uniform 32 KWord blocks

• Chip-Erase Capability

  Summary

  *Not Recommended for New Design*
  The SST39VF1601 device is 1M x16 and 2M x16, respectively, CMOS Multi-Purpose Flash Plus (MPF+) manufactured with SST's proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF1601 writes (Program or Erase) with a 2.7-3.6V power supply. This device conforms to JEDEC standard pinouts for x16 memories.

  Additional Features

• Organized as 1M x16: SST39VF1601/1602

• Low Power Consumption (typical values at 5 MHz)– Active Current: 9 mA (typical)– Standby Current: 3 µA (typical)– Auto Low Power Mode: 3 µA (typical)

• Hardware Block-Protection/WP# Input Pin– Top Block-Protection (top 32 KWord)for SST39VF1602– Bottom Block-Protection (bottom 32 KWord)for SST39VF1601

• Sector-Erase Capability– Uniform 2 KWord sectors

• Block-Erase Capability– Uniform 32 KWord blocks

• Chip-Erase Capability

• Erase-Suspend/Erase-Resume Capabilities

• Hardware Reset Pin (RST#)

• Security-ID Feature– SST: 128 bits; User: 128 bits

• Fast Erase and Word-Program:– Sector-Erase Time: 18 ms (typical)– Block-Erase Time: 18 ms (typical)– Chip-Erase Time: 40 ms (typical)– Word-Program Time: 7 µs (typical)

• Packages Available– 48-lead TSOP (12mm x 20mm)– 48-ball TFBGA (6mm x 8mm)

• All non-Pb (lead-free) devices are RoHS compliant

SST39VF1601

Features:

• Organized as 1M x16: SST39VF1601/1602

• Low Power Consumption (typical values at 5 MHz)– Active Current: 9 mA (typical)– Standby Current: 3 µA (typical)– Auto Low Power Mode: 3 µA (typical)

• Hardware Block-Protection/WP# Input Pin– Top Block-Protection (top 32 KWord)for SST39VF1602– Bottom Block-Protection (bottom 32 KWord)for SST39VF1601

• Sector-Erase Capability– Uniform 2 KWord sectors

• Block-Erase Capability– Uniform 32 KWord blocks

• Chip-Erase Capability

  Summary

  *Not Recommended for New Design*
  The SST39VF1601 device is 1M x16 and 2M x16, respectively, CMOS Multi-Purpose Flash Plus (MPF+) manufactured with SST's proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF1601 writes (Program or Erase) with a 2.7-3.6V power supply. This device conforms to JEDEC standard pinouts for x16 memories.

  Additional Features

• Organized as 1M x16: SST39VF1601/1602

• Low Power Consumption (typical values at 5 MHz)– Active Current: 9 mA (typical)– Standby Current: 3 µA (typical)– Auto Low Power Mode: 3 µA (typical)

• Hardware Block-Protection/WP# Input Pin– Top Block-Protection (top 32 KWord)for SST39VF1602– Bottom Block-Protection (bottom 32 KWord)for SST39VF1601

• Sector-Erase Capability– Uniform 2 KWord sectors

• Block-Erase Capability– Uniform 32 KWord blocks

• Chip-Erase Capability

• Erase-Suspend/Erase-Resume Capabilities

• Hardware Reset Pin (RST#)

• Security-ID Feature– SST: 128 bits; User: 128 bits

• Fast Erase and Word-Program:– Sector-Erase Time: 18 ms (typical)– Block-Erase Time: 18 ms (typical)– Chip-Erase Time: 40 ms (typical)– Word-Program Time: 7 µs (typical)

• Packages Available– 48-lead TSOP (12mm x 20mm)– 48-ball TFBGA (6mm x 8mm)

• All non-Pb (lead-free) devices are RoHS compliant